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Tekbox TBMDA3B Modulated wideband power amplifier 10MHz-1GHz
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  • Tekbox TBMDA3B Modulated wideband power amplifier 10MHz-1GHz

Tekbox TBMDA3B Modulated wideband power amplifier 10MHz-1GHz

Art. nr: 72410
1 087 EUR
 
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Product description

The TBMDA3B, 10MHz – 1 GHz modulated broadband power amplifier is designed to provide a low-cost RF power source for immunity testing of electronic building blocks and pre-conformance products. Operated at an input power of less than 0 dBm, it can deliver a saturated output power of up to 8 W.
 
TBMDA3 is ideal for driving Tekbox near field probes to find the sensitive point in electronic circuits, or to generate strong electric field for radiated immunity testing in TEM cells. It can generate up to 700V/m when running Tekbox TEM Cell TBTC0, 400V/m when running TBTC1, 200V/m when running TBTC2 or 130V/m when running TBTC3.

A built-in AM modulator enables the use of tracking generators as a signal source. The TBMDA3B has sufficient gain to achieve its maximum output power when driven with the tracking generator in a spectrum analyzer. In addition to 1 kHz, 80% AM, the TBMDA3B has built-in modulation capability to generate 1 kHz, 50% duty cycle PM signals. In PM mode, the TBMDA3B can also generate a 217 Hz signal with 12.5% ​​duty cycle to simulate TDMA noise from mobile phones.
 
Application:
  • Broadband RF power amplifier for conducted immunity tests driving CDNs or BCI probes
  • Broadband RF power amplifier for radiation immunity testing, driving near field probes
  • Broadband RF power amplifier for radiated immunity testing, driving TEM cells
Features:
  • CW amplifier (modulation of)
  • 1 kHz, 80% AM modulation
  • 1 kHz, 50% duty cycle pulse modulation
217 Hz, 12.5% ​​duty cycle pulse modulation
 

More information

Technical data:
  • Input / Output: 50 Ohm, N female
  • Supply Voltage range: 110 V…240 V
  • Supply power consumption: 25 W @ 220V
  • Operating temperature range: -20°C to 50°C
  • Frequency range: 10 MHz – 1 GHz, usable from 5 MHz to 1.1 GHz
  • Small signal gain: 42.5 dB typ.
  • Gain flatness 10 MHz – 1 GHz / Pin = -15 dBm: 2.5 dB typ.
  • Saturated output power @ 5 MHz / Pin = 0 dBm: 38.9 dBm (7.8 W) typ.
  • Saturated output power @ 10 MHz / Pin = 0 dBm: 39.1 dBm (8.2 W) typ.
  • Saturated output power @ 50 MHz / Pin = 0 dBm: 39.8 dBm (9.5 W) typ.
  • Saturated output power @ 75 MHz / Pin = 0 dBm: 39.9 dBm (9.8 W) typ.
  • Saturated output power @ 100 MHz / Pin = 0 dBm: 39.9 dBm (9.7 W) typ.
  • Saturated output power @ 250 MHz / Pin = 0 dBm: 40.5 dBm (11.2 W) typ.
  • Saturated output power @ 500 MHz / Pin = 0 dBm: 40.5 dBm (11.2 W) typ.
  • Saturated output power @ 750 MHz / Pin = 0 dBm: 39.5 dBm (8.9 W) typ.
  • Saturated output power @ 1 GHz / Pin = 0 dBm: 38.8 dBm (7.6 W) typ.
  • Saturated output power @ 1.1 GHz / Pin = 0 dBm: 38.3 dBm (6.8 W) typ.

  • 1dB output compression point @ 5 MHz: 38.2 dBm typ. (Pin: -2 dBm)
  • 1dB output compression point @ 10 MHz: 38.7 dBm typ. (Pin: -3 dBm)
  • 1dB output compression point @ 50 MHz: 39.1 dBm typ. (Pin: -3 dBm)
  • 1dB output compression point @ 100 MHz: 39.7 dBm typ. (Pin: -1 dBm)
  • 1dB output compression point @ 250 MHz: 39.9 dBm typ. (Pin: -2 dBm)
  • 1dB output compression point @ 500 MHz: 39.4 dBm typ. (Pin: -3 dBm)
  • 1dB output compression point @ 750 MHz: 38.8 dBm typ. (Pin: -3 dBm)
  • 1dB output compression point @ 1000 MHz: 37 dBm typ. (Pin: -5 dBm)
  • 1dB output compression point @ 1100 MHz: 36.9 dBm typ. (Pin: -5 dBm)

  • 2 nd harmonic, 100 MHz, Pout = 39.9 dBm: < – 27 dBc typ.
  • 2 nd harmonic, 100 MHz, Pout = 34 dBm: < – 13.5 dBc typ.
  • 3 rd harmonic, 100 MHz, Pout = 39.9 dBm: < – 12 dBc typ.
  • 3 rd harmonic, 100 MHz, Pout = 34 dBm: < – 24 dBc typ.
 
Total harmonisk distorsion:
  • 18.9% @100 MHz, Pout = 31 dBm typ.
  • 21.8% @100 MHz, Pout = 34 dBm typ.
  • 23.4% @100 MHz, Pout = 37 dBm typ.
  • 31.1% @100 MHz, Pout = 39.9 dBm typ.

  • Third order output intercept point: 44 dBm, @100 MHz, ∆ f = 2 MHz, typ.
  • Internal modulation frequency AM: 1 kHz ± 20%
  • Internal modulation frequencies PM: 1 kHz ± 20%, 217 Hz ± 20%
  • Duty cycle, PM: 50% ± 10% @ 1 kHz; 12.5% ± 20% @ 217 Hz
 
Maximum ratings:
  • Maximum input power: +0 dBm