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Tekbox TBMDA5 Modulated Power Amplifier 150 kHz - 400 MHz
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  • Tekbox TBMDA5 Modulated Power Amplifier 150 kHz - 400 MHz

Tekbox TBMDA5 Modulated Power Amplifier 150 kHz - 400 MHz

Art. nr: Tekbox TBMDA5
1 087 EUR
 
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Product description

The TBMDA5 modulated amplifier provides the necessary power, bandwidth and modulation for conducted immunity tests with CDNs in the frequency range from 150 kHz to 400 MHz. It is designed to be driven by the tracking generator output from spectrum analyzers.

With a 1 dB compression point of up to 2.5W in the frequency range 150 kHz to 400 MHz, it can generate test levels class 1 and class 2 according to ISO / EN 61000-4-6. A built-in AM modulator enables the use of tracking generators as a signal source.

The TBMDA5 has sufficient gain to achieve the maximum output power of 0 dBm provided by a spectrum analyzer tracking generator.
In addition to 1 kHz, 80% AM, the TBMDA5 has built-in modulation capability to generate 1 kHz, 50% duty cycle PM signals. In PM mode, the TBMDA5 can also generate a 217 Hz signal with a 12.5% ​​duty cycle to simulate mobile phone TDMA noise.
 
Features:
  • CW amplifier (modulation of)
  • 1 kHz, 80% AM modulation
  • 1 kHz, 50% duty cycle pulse modulation 217 Hz
  • 12.5% ​​duty cycle pulse modulation
Specifications:
  • Input/output: 50 Ohm, N female
  • Supply voltage range: 110 V...240 V
  • Power consumption: 19 W at 220V
  • Operating temperature range: -20°C to 50°C
  • Frequency range: 150 kHz – 400 MHz, usable from 100 kHz to 1.2 GHz Small signal gain: 38 dB typ.
  • Gain flatness 150 kHz – 400 MHz / Pin = -5 dBm: 3.5 dB typ.
  • Saturated output power @ 150 kHz / Pin = 0 dBm: 32.6 dBm (1.8 W) typ.
  • Saturated output power @ 500 kHz / Pin = 0 dBm: 36 dBm (4 W) typ.
  • Saturated output power @ 1 MHz / Pin = 0 dBm: 36.1 dBm (4.1 W) typ.
  • Saturated output power @ 10 MHz / Pin = 0 dBm: 37.8 dBm (6 W) typ.
  • Saturated output power @ 100 MHz / Pin = 0 dBm: 36.4 dBm (4.4 W) typ.
  • Saturated output power @ 250 MHz / Pin = 0 dBm: 36 dBm (4 W) typ.
  • Saturated output power @ 400 MHz / Pin = 0 dBm: 33.7 dBm (2.3 W) typ.
  • Saturated output power @ 750 MHz / Pin = 0 dBm: 33.2 dBm (2.1 W) typ.
  • Saturated output power @ 1 GHz / Pin = 0 dBm: 34.8 dBm (3 W) typ.
  • Saturated Output Power @ 1.1 GHz / Pin = 0 dBm: 31.1 dBm (1.3 W) typ.
  • Saturated output power @ 1.2 GHz / Pin = 0 dBm: 27.3 dBm (0.5 W) typ.
  • 1dB output compression point @ 150 kHz: +29.6 dBm typ. (Pin: -9 dBm)
  • 1dB output compression point @ 500 kHz: +32.9 dBm typ. (Pin: -6dBm)
  • 1dB output compression point @ 1 MHz: +33.1 dBm typ. (Pin: -5dBm)
Application:
  • General Wideband RF Power Amplifier
  • Broadband RF power amplifier for conducted immunity tests driving CDNs or BCI probes
  • Broadband RF power amplifier for radiation immunity testing, driving near field probes
  • Broadband RF power amplifier for radiated immunity testing, driving TEM cells